B3M500E080KFL
SiC MOSFET B3M500E080KFL
800V TO-220F-3 碳化硅MOSFET
| 漏源电压 VDS | 800 V |
|---|---|
| 导通电阻 RDS(on) | 500 mΩ |
| 连续漏极电流 ID@25°C | 5.2 A |
| 栅极电荷 QG | 7.5 nC |
| 封装 | TO-220F-3 |
- 源表电流为ID@25℃
- RDS(on)和Qg测试条件以规格书为准
SiC MOSFET B3M500E080KFL
800V TO-220F-3 碳化硅MOSFET
| 漏源电压 VDS | 800 V |
|---|---|
| 导通电阻 RDS(on) | 500 mΩ |
| 连续漏极电流 ID@25°C | 5.2 A |
| 栅极电荷 QG | 7.5 nC |
| 封装 | TO-220F-3 |