B3M040120Z
SiC MOSFET B3M040120Z
1200V TO-247-4 碳化硅MOSFET
| 漏源电压 VDS | 1200 V |
|---|---|
| 导通电阻 RDS(on) | 40 mΩ |
| 连续漏极电流 ID@25°C | 64 A |
| 栅极电荷 QG | 85 nC |
| 封装 | TO-247-4 |
| 等级 | 工业级 |
- 源表电流为ID@25℃
- RDS(on)和Qg测试条件以规格书为准
可替代：Infineon IMZA120R040M1H, ST SCT040W120G3-4, onsemi NTH4L040N120SC1, onsemi NTH4L040N120M3S, Wolfspeed C3M0040120K, ROHM SCT3040KRC15, Toshiba TW045Z120C, Toshiba TW060Z120C